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revisions ltr description date (yr-mo-da) approved a changes in accordance with nor 5962-r338-97. 97-09-30 monica l. poelking b changes in accordance with nor 5962-r049-99. 99-04-05 monica l. poelking c update boilerplate to mil-prf-38535 and updated appendix a. editorial changes throughout. ? tmh 00-07-17 monica l. poelking d update boilerplate to mil-prf-38535 requirements and update the radiation hardness assurance boilerplate paragraphs. - ltg 08-01-23 thomas m. hess rev sheet rev d d d d d d d d d d sheet 15 16 17 18 19 20 21 22 23 24 rev status rev d d d d d d d d d d d d d d of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by thanh v. nguyen defense supply center columbus standard microcircuit drawing checked by thanh v. nguyen columbus, ohio 43218-3990 http://www.d scc.dla.mil this drawing is available for use by all departments approved by monica l. poelking and agencies of the department of defense drawing approval date 96-03-25 microcircuit, digital, radiation hardened advanced cmos, dual d flip- flop with set and reset, monolithic silicon amsc n/a revision level d size a cage code 67268 5962-96799 sheet 1 of 24 dscc form 2233 apr 97 5962-e176-08
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class leve ls consisting of high reliability (device classes q and m) and space application (device class v). a c hoice of case outlines and lead finishes ar e available and are reflected in the par t or identifying number (pin). when available, a choice of radiation hardness assu rance (rha) levels is reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 f 96799 01 v x c federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices m eet the mil-prf-38535 specif ied rha levels and are marked with the appropriate rha designator. device cl ass m rha marked devices m eet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 acs74 radiation hardened sos, advanced cmos, dual d flip-flop with set and reset 02 acs74-02 1 / radiation hardened sos, advanced cmos, dual d flip-flop with set and reset 1.2.3 device class designator . the device class designator is a single le tter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qua lification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as des ignated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style c gdip1-t14 or cdip2-t14 14 dual-in-line x gdfp1-t14 or cdfp3-f14 14 flat pack 1.2.5 lead finish . the lead finish is as specified in mil-pr f-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 1 / device type -02 is the same as device type -01 except t hat the device type -02 products ar e manufactured at an overseas wafer foundry. device type -02 is used to positively identif y, by marketing part number and by brand of the actual device, material that is supplied by an overseas foundry.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ) .................................................................................. -0.5 v dc to +7.0 v dc dc input voltage range (v in ) ................................................................................ -0.5 v dc to v cc + 0.5 v dc dc output voltage range (v out ) ........................................................................... -0.5 v dc to v cc + 0.5 v dc dc input current, any one input (i in )..................................................................... 10 ma dc output current, any one output (i out ).............................................................. 50 ma storage temperature range (t stg ) ....................................................................... -65 c to +150 c lead temperature (solderi ng, 10 sec onds)........................................................... +265 c thermal resistance, junction-to-case ( jc ): case out line c ................................................................................................... 24 c/w case out line x .................................................................................................... 30 c/w thermal resistance, junction-to-ambient ( ja ): case out line c ................................................................................................... 74 c/w case out line x .................................................................................................... 116 c/w junction temperature (t j ) .................................................................................... +175 c maximum package power dissipation at t a = +125 c (p d ): 4 / case outli ne c ................................................................................................... 0.68 w case outli ne x .................................................................................................... 0. 43 w 1.4 recommended operating conditions . 2 / 3 / supply voltage range (v cc ) .................................................................................. +4.5 v dc to +5.5 v dc input voltage range (v in ) ...................................................................................... +0.0 v dc to v cc output voltage range (v out )................................................................................. +0.0 v dc to v cc maximum low level input voltage (v il ).................................................................. 30% of v cc minimum high level input voltage (v ih )................................................................. 70% of v cc case operating temperature range (t c ) ............................................................... -55 c to +125 c maximum input rise or fall time at v cc = 4.5 v (t r , t f ) ............................................ 10 ns/v 1.5 radiation features . total dose ........................................................................................................... > 3 x 10 5 rads (si) single event phenomenon (sep) effective linear energy threshold (let) no upsets (see 4.4.4. 4)....................................... > 100 mev/(cm 2 /mg) 5 / dose rate upset (20 ns pulse) ............................................................................. > 1 x 10 11 rads (si)/s 5 / latch-u p .............................................................................................................. n one 5 / dose rate surviv ability ......................................................................................... > 1 x 10 12 rads (si)/s 5 / 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise specified, a ll voltages are referenced to gnd. 3 / the limits for the parameters specified herein shall apply over the full specified v cc range and case temperature range of -55 c to +125 c unless otherwise noted. 4 / if device power exceeds package dissipation capability, provide heat sinking or derat e linearly (the derating is based on ja ) at the following rate: case c ...................................................................................................................... .... 13.5 mw/ c case x ........................................................................................................................ .. 8.6 mw/ c 5 / limits are guaranteed by design or pr ocess, but not production tested unless s pecified by the cu stomer through the purchase order or contract.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specif ication, standards, and handbooks . the following specificati on, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of thes e documents are those cited in t he solicitation or contract. department of defense specification mil-prf-38535 - integrated circuits, manufacturing, general specification for. department of defense standards mil-std-883 - test met hod standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. department of defense handbooks mil-hdbk-103 - list of st andard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (copies of these documents are available online at http://assist.daps.dla.mil/qui cksearch/ or http://assist.daps.dla.mil or fro m the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 non-government publications . the following document(s) form a part of this document to the ext ent specified herein. unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. american society for testing and materials (astm) astm f1192- standard guide for the measurement of single ev ent phenomena (sep) induced by heavy ion irradiation of semiconductor devices. (copies of this document is available online at http://www.astm.org/ or from astm internati onal, p. o. box c700, 100 barr harbor drive, we st conshohocken, pa 19428-2959). 2.3 order of precedence . in the event of a conflict between the text of this drawing and the refe rences cited herei n, the text of this drawing takes precedence. nothing in this documen t, however, supersedes applicable laws and regulations unless a specific exempti on has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacture r's quality management (qm) plan. the modification in the qm plan shall not affe ct the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements for microcircu it die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 1. 3.2.3 truth table . the truth table shall be as specified on figure 2. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 3. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circ uit shall be as specified on figure 4. 3.2.6 irradiation test connections . the irradiation test connections shall be as specified in table iii.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 5 dscc form 2234 apr 97 3.3 electrical performance characteri stics and postirradiati on parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos tirradiation parameter limits are as specified in table ia and shall apply over t he full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked. for packages where marking of t he entire smd pin number is not feasible due to space lim itations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accor dance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certificat ion/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this draw ing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved sour ce of supply in mil-hdbk-103 (see 6.6.2 herein). the certific ate of compliance submitted to dscc-va prior to listing as an approved source of supply for th is drawing shall affirm that the manufacture r's product meets, for device classes q and v, the requirement s of mil-prf-38535 and herein or for device class m, the require ments of mil-prf-38535, appendix a and herein. 3.7 certificat e of conformance . a certificate of conformanc e as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notificat ion to dscc-va of change of product (see 6.2 herein) involving devices acqui red to this drawing is required for any change that affects this drawing. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable requir ed documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 38 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 6 dscc form 2234 apr 97 table ia. electrical performance characteristics . limits 2 / test symbol test conditions 1 / -55 c t c +125 c unless otherwise specified device type v cc group a subgroups min max unit for all inputs affecting output under test v in = 3.15 v or 1.35 v for all other inputs v in = v cc or gnd i oh = -50 a all 1, 2, 3 4.40 m, d, p, l, r, f 3 / all 4.5 v 1 4.40 for all inputs affecting output under test v in = 3.85 v or 1.65 v for all other inputs v in = v cc or gnd i oh = -50 a all 1, 2, 3 5.40 high level output voltage v oh m, d, p, l, r, f 3 / all 5.5 v 1 5.40 v for all inputs affecting output under test v in = 3.15 v or 1.35 v for all other inputs v in = v cc or gnd i ol = 50 a all 1, 2, 3 0.1 m, d, p, l, r, f 3 / all 4.5 v 1 0.1 for all inputs affecting output under test v in = 3.85 v or 1.65 v for all other inputs v in = v cc or gnd i ol = 50 a all 1, 2, 3 0.1 low level output voltage v ol m, d, p, l, r, f 3 / all 5.5 v 1 0.1 v 1 +0.5 for input under test, v in = 5.5 v for all other inputs v in = v cc or gnd all 2, 3 +1.0 input current high i ih m, d, p, l, r, f 3 / all 5.5 v 1 +1.0 a 1 -0.5 for input under test, v in = gnd for all other inputs v in = v cc or gnd all 2, 3 -1.0 input current low i il m, d, p, l, r, f 3 / all 5.5 v 1 -1.0 a see footnotes at end of table.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 7 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. limits 2 / test symbol test conditions 1 / -55 c t c +125 c unless otherwise specified device type v cc group a subgroups min max unit for all inputs affecting output u n de r t es t , v in = 4. 5 v o r 0 . 0 v 1 -12.0 all 2, 3 -8.0 output current high (source) i oh 4 / v out = 4.1 v m, d, p, l, r, f 3 / all 4.5 v 1 -8.0 ma for all inputs affecting output u n de r t es t , v in = 4. 5 v o r 0 . 0 v 1 12.0 all 2, 3 8.0 output current low (sink) i ol 4 / v out = 0.4 v m, d, p, l, r, f 3 / all 4.5 v 1 8.0 ma v in = v cc or gnd 1 10.0 all 2, 3 200.0 quiescent supply current i cc m, d, p, l, r, f 3 / all 5.5 v 1 200.0 a input capacitance c in all 5.0 v 4 10 pf v ih = 5.0 v, v il = 0.0 v f = 1 mhz, see 4.4.1c 4 65 power dissipation capacitance c pd 5 / all 5.0 v 5, 6 75 pf v ih = 3.15 v, v il = 1.35 v all 7, 8 l h functional test 6 / see 4.4.1b m, d, p, l, r, f 3 / all 4.5 v 7 l h c l = 50 pf r l = 500 see figure 4 9 1.0 18.0 all 10, 11 1.0 20.0 t plh1 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 20.0 c l = 50 pf r l = 500 see figure 4 9 1.0 15.0 all 10, 11 1.0 18.0 propagation delay time, ncp to nq or nq t phl1 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 18.0 ns 9 1.0 13.0 c l = 50 pf r l = 500 see figure 4 all 10, 11 1.0 16.0 propagation delay time, ns to nq t plh2 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 16.0 ns 9 1.0 14.0 c l = 50 pf r l = 500 see figure 4 all 10, 11 1.0 17.0 propagation delay time, ns to nq t phl2 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 17.0 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 8 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. limits 2 / test symbol test conditions 1 / -55 c t c +125 c unless otherwise specified device type v cc group a subgroups min max unit 9 1.0 12.0 c l = 50 pf r l = 500 see figure 4 all 10, 11 1.0 14.0 propagation delay time, nr to nq t plh3 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 14.0 ns 9 1.0 14.0 c l = 50 pf r l = 500 see figure 4 all 10, 11 1.0 17.0 propagation delay time, nr to nq t phl3 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 17.0 ns 9 1.0 11.0 c l = 50 pf r l = 500 see figure 4 all 10, 11 1.0 12.0 output transition time t thl , t tlh 7 / m, d, p, l, r, f 3 / all 4.5 v 9 1.0 12.0 ns 9 79.0 maximum clock frequency f max 8 / all 4.5 v 10, 11 76.0 mhz 9 4.3 setup time, high or low, nd to ncp t s 8 / all 4.5 v 10, 11 4.9 ns 9 2.0 hold time, high or low, nd to ncp t h 8 / all 4.5 v 10, 11 2.0 ns 9 5.5 nr or ns pulse width, low t w1 8 / all 4.5 v 10, 11 6.3 ns 9 5.5 ncp pulse width, high or low t w2 8 / all 4.5 v 10, 11 6.3 ns 9 3.7 recovery time, nr or ns to ncp t rec 8 / c l = 50 pf r l = 500 see figure 4 all 4.5 v 10, 11 3.7 ns 1 / each input/output, as applicable, shall be tested at the specified tem perature, for the specified limits, to the tests in ta ble ia herein. output terminals not designat ed shall be high level logic, low leve l logic, or open, except for the i cc test, the output terminals shall be open. when performing the i cc test, the current meter shall be placed in the circuit such that all current flows through the meter. 2 / for negative and positive voltage and current values, the sign designates the potential difference in reference to gnd and the direction of current flow respectively ; and the absolute value of t he magnitude, not the sign, is relative to the minimum and maximum limits, as app licable, listed herein. 3 / rha devices supplied to this drawing have been characteriz ed through all levels m, d, p, l, r, and f of irradiation. however, this device is only tested at the 'f' level. pre and post irradiation values are identical unless otherwise specified in table ia. when performing post i rradiation electrical measur ements for any rha level, t a = +25 c. 4 / force/measure functions may be interchanged.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 9 dscc form 2234 apr 97 table ia. electrical performance characteristics - continued. 5 / power dissipation capacitance (c pd ) determines both the power consumption (p d ) and current consumption (i s ). where p d = (c pd + c l ) (v cc x v cc )f + (i cc x v cc ) i s = (c pd + c l ) v cc f + i cc f is the frequency of the input signal. 6 / the test vectors used to verify the tr uth table shall, at a minimum, test all functions of each input and output. all possi ble input to output logic patterns per function shall be guaranteed, if not test ed, to the truth table in figure 2 herein. for v out measurements, l 0.5 v and h 4.0 v. 7 / ac limits at v cc = 5.5 v are equal to the limits at v cc = 4.5 v. for propagation delay te sts, all paths must be tested. 8 / this parameter is guaranteed but not test ed. this parameter is characterized upon initial design or process changes which affect this characteristic. table ib. sep test limits . 1 / 2 / v cc = 4.5 v device types t a = temperature 10 c effective let no upsets [mev/(mg/cm 2 )] bias for latch-up test v cc = 5.5 v no latch-up let = 3 / 4 / 01, 02 +25 c let 100 100 1 / for sep test conditions, see 4.4.4.4 herein. 2 / technology characterization and model verifi cation supplemented by in-line data may be used in lieu of end-of-line testing. test pl an must be approved by trb and qualifying activity. 3 / worst case temperature is t a + 125 c. 4 / tested to an let of 100 mev/(mg/cm 2 ), with no latch-up (sel).
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 10 dscc form 2234 apr 97 device type all case outlines c and x terminal number terminal symbol terminal number terminal symbol 1 2 3 4 5 6 7 1r 1d 1cp 1s 1q 1q gnd 8 9 10 11 12 13 14 2q 2q 2s 2cp 2d 2r v cc figure 1. terminal connections . inputs outputs ns nr ncp nd nq nq l h x x h l h l x x l h l l x x h 1 / h 1 / h h h h l h h l l h h h l x q0 q0 1 / this configuration is non-stable, that is, it will not persist when set and reset input s return to their inac tive (high) level. h = high voltage level l = low voltage level x = don't care = low-to-high clock transition q0, q0 = the level of q, q before the indicated input conditions were established figure 2. truth table .
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 11 dscc form 2234 apr 97 figure 3. logic diagram .
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 12 dscc form 2234 apr 97 figure 4. switching waveforms and test circuit .
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 13 dscc form 2234 apr 97 notes: 1. c l = 50 pf minimum or equivalent (inc ludes test jig and probe capacitance). 2. r l = 500 or equivalent. 3. input signal from pulse generator: v in = 0.0 v to v cc ; prr 10 mhz; t r 3.0 ns; t f 3.0 ns; t r and t f shall be measured from 10% v cc to 90% v cc and from 90% v cc to 10% v cc , respectively. figure 4. switching waveforms and test circuit - continued.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 14 dscc form 2234 apr 97 4. verification 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the devic e manufacturer's quality m anagement (qm) plan. the modification in the qm plan shall not affect the form, fit, or functi on as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf- 38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. fo r device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prio r to quality conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c or d. the test circuit s hall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, output s, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, output s, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspec tion for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspecti ons (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specifi ed in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specif ied in table iia herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table on figure 2 herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functiona lity of the device. c. subgroups 4, 5 and 6 (c in and c pd measurements) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. c in shall be measured between the designated terminal and gnd at a frequency of 1 mhz. for c in and c pd the tests shall be sufficient to validat e the limits defined in table ia herein.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 15 dscc form 2234 apr 97 table iia. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 final electrical parameters (see 4.2) 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3 / group d end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1 and 7. 2 / pda applies to subgroups 1, 7, 9 and deltas. 3 / delta limits as specified in tabl e iib shall be required where specified, and the delta limits shall be completed with reference to the zero hour el ectrical parameters (see table ia). table iib. burn-in and operating life test, delta parameters (+25 c) . parameters 1 / delta limits i cc 2 a i ol /i oh 15% 1 / these parameters shall be recorded before and after the required burn-in and life test to determine delta limits. table iii. irradiation test connections . 1 / open ground v cc = 5 v 0.5 v 5, 6, 8, 9 7 1, 2, 3, 4, 10, 11, 12, 13, 14 1 / each pin except v cc and gnd will have a series resistor of 47k 5%, for irradiation testing. 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 16 dscc form 2234 apr 97 4.4.2.1 additional criteria for device class m . steady-state life test condi tions, method 1005 of mil-std-883: a. test condition a, b, c or d. the test circuit sha ll be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wi th the intent specif ied in method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as spec ified in the device manufacturer's qm pl an in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level c ontrol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon r equest. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance wi th the intent specif ied in method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical par ameters shall be as specif ied in table iia herein. b. for device classes q and v, the devices or test vehicl e shall be subjected to radiat ion hardness assured tests as specified in mil-prf-38535 for the rha le vel being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as s pecified in mil-prf-38535, appendix a for t he rha level being tested. all device classes must meet the postirradiati on end-point electrical parameter lim its as defined in table ia at t a = +25 c 5 c, after exposure, to the subgroups specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019, condition a and as specified herein. 4.4.4.1.1 accelerated annealing test . accelerated annealing tests shall be perfo rmed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specif ied in table ia herein and shall be the pre-irradiation end-point el ectrical parameter limit at 25 c 5 c. testing shall be perform ed at initial qualification and after any design or process changes which ma y affect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . when required by the customer, dos e rate induced latchup testing shall be performed in accordance with method 1020 of mil-std-883 and as spec ified herein. tests s hall be performed on devices, sec, or approved test structures at tec hnology qualification and after any design or process changes which may affect the rha capability of the process. 4.4.4.3 dose rate upset testing . when required by the customer, dose rate upset testing shall be performed in accordance with method 1021 of mil-std-883 and herein. a. transient dose rate upset test ing shall be performed at initial qualificat ion and after any design or process changes which may effect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil-prf-38535. device parameters that in fluence upset immunity shall be monitored at the wafer level in accordance wi th the wafer level hardness assurance plan and mil-prf-38535.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 17 dscc form 2234 apr 97 4.4.4.4 single event phenomena (sep) . when specified in the pur chase order or contract, sep testing shall be performed on class v devices. sep testing shall be per formed on the standard evaluati on circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at init ial qualification and after any design or pr ocess changes which may affect the upset or latchup characteristics. test 4 devices with zero fa ilures. astm f1192 may be used as a guideline when performing sep testing. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence sha ll be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixtur ing or package related effects is allowed. b. the fluence shall be 100 errors or 10 7 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux ra tes which differ by at least an order of magnitude. d. the particle range shall be 20 microns in silicon. e. the upset test temperature shall be +25 c. the latchup test temperature s hall be at the maximum rated operating temperature 10 c. f. bias conditions shall be v cc = 4.5 v dc for the upset measurements and v cc = 5.5 v dc for the latchup measurements. g. for sep test limits, see table ib herein. 4.5 methods of inspection . methods of inspection shall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, a ll voltages given are referenced to the microcircuit gnd terminal. currents given are conventional current and positive when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are int ended for use for government microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor- prepared specificati on or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configurati on control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this c oordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defens e supply center columbus (dscc) when a system application requires configuration control and which smd's are applicabl e to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelect ronic devices (fsc 5962) should contac t dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va, columbus, ohio 43218-3990, or telephone (614) 692-0547.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 18 dscc form 2234 apr 97 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and defin itions used herein are defined in mil-prf-38535 and mil-hdbk-1331. gnd ............................................ gr ound zero voltage potential. i cc ................................................ quiesc ent supply current. i il ................................................. input cu rrent low. i ih ................................................. input cu rrent high. t c ................................................ case te mperature. t a ................................................ ambient te mperature. v cc .............................................. positi ve supply voltage. c in ............................................... input te rminal-to-gnd capacitance. c out ............................................. output te rminal-to-gnd capacitance. c pd .............................................. power di ssipation capacitance. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submi tted a certificate of co mpliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agr eed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va. 6.7 additional information . when specified in the purchase order or contract, a copy of the following additional data shall be supplied. a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep).
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 19 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 a.1 scope a.1.1 scope . this appendix establishes minimum requirements for microcircuit die to be s upplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mi l-prf-38535 and the manufacturers approved qm plan for use in monolithic microc ircuits, multi-chip modules (mcms), hybr ids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are spec ified herein. two product assu rance classes consisting of military high reliability (device class q) and space application (device class v) are refl ected in the part or identification n umber (pin). when available a choice of radiation hardne ss assurance (rha) levels ar e reflected in the pin. a.1.2 pin . the pin is as shown in the following example: 5962 f 96799 01 v 9 a federal stock class designator rha designator (see a.2.1) device type (see a.2.2) device class designator die code die details (see a.2.4) \ / (see a.2.3) \/ drawing number a.1.2.1 rha designator . device classes q and v rha identified die sha ll meet the mil-prf-38535 s pecified rha levels. a dash (-) indicates a non-rha die. a.1.2.2 device type(s) . the device type(s) shall identif y the circuit function as follows: device type generic number circuit function 01 acs74 radiation hardened, sos, advanced cmos, dual d flip-flop with set and reset. 02 acs74-02 radiati on hardened, sos, advanced cmos, dual d flip-flop with set and reset. a.1.2.3 device class designator . device class device requirements documentation q or v cert ification and qualificati on to the die requirem ents of mil-prf-38535.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 20 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 a.1.2.4 die details . the die details designation shall be a unique lette r which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for ea ch product and variant supplied to this appendix. a.1.2.4.1 die physical dimensions . die types figure number 01, 02 a-1 a.1.2.4.2 die bonding pad locati ons and electrical functions . die types figure number 01, 02 a-1 a.1.2.4.3 interface materials . die types figure number 01, 02 a-1 a.1.2.4.4 assembly related information . die types figure number 01, 02 a-1 a.1.3 absolute maximum ratings . see paragraph 1.3 herein for details. a.1.4 recommended operating conditions . see paragraph 1.4 herein for details.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 21 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 a.2. applicable documents a.2.1 government specif ication, standard, and handbooks . the following specificat ion, standard, and handbooks form a part of this drawing to the extent spec ified herein. unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. department of defense specification mil-prf-38535 - integrated circuits, manufacturing, general specification for. department of defense standard mil-std-883 - test method standard microcircuits. department of defense handbooks mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (copies of these documents are available online at http://assist.daps.dla.mil/qui cksearch/ or http://assist.daps.dla.mil or fro m the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) a.2.2 order of precedence . in the event of a conflict bet ween the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this doc ument, however, supersedes applicable laws and regulations unless a specific exempti on has been obtained. a.3 requirements a.3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacture r?s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. a.3.2 design, construc tion and physical dimensions . the design, construction and physica l dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm pl an, for device classes q and v and herein. a.3.2.1 die physical dimensions . the die physical dimensions shall be as specified in a.1.2. 4.1 and on figure a-1. a.3.2.2 die bonding pad locati ons and electrical functions . the die bonding pad locations and electrical functions shall be as specified in a.1.2. 4.2 and on figure a-1. a.3.2.3 interface materials . the interface materials for the die shall be as specified in a.1. 2.4.3 and on figure a-1. a.3.2.4 assembly related information . the assembly related information shall be as specified in a.1. 2.4.4 and figure a-1. a.3.2.5 truth table . the truth table shall be as defined in paragraph 3.2.3 herein. a.3.2.6 irradiat ion test connections . the irradiation test connections shall be as defined within paragraph 3.2.6 herein. a.3.3 electrical performance characteri stics and post-irradiat ion parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t-irradiation parameter limit s are as specified in tabl e ia of the body of this document. a.3.4 electrical test requirements . the wafer probe test requirements sha ll include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table ia.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 22 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 a.3.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carri ers, for shipment to a customer, shall be identified with the wa fer lot number, the certification mark, t he manufacturer?s ident ification and the pin listed in a.1.2 herein. the certific ation mark shall be a ?qml? or ?q? as required by mil-prf-38535. a.3.6 certificat ion of compliance . for device classes q and v, a certificat e of compliance shall be required from a qml-38535 listed manufacturer in order to suppl y to the requirements of this drawing (see a.6.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approv ed source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, t he requirements of mil-prf-38535 and the requirements herein. a.3.7 certificat e of conformance . a certificate of conformance as requi red for device classes q and v in mil-prf-38535 shall be provided with each lot of microc ircuit die delivered to this drawing. a.4. verification a.4.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer?s qualit y management (qm) plan. the modifications in the qm plan shall not affect the form, fi t, or function as described herein. a.4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf- 38535, and as defined in the manufacturer?s qm plan. as a minimum, it shall consist of: a. wafer lot acceptance for class v product usi ng the criteria defined in mil-std-883, method 5007. b. 100% wafer probe (see paragraph a.3.4 herein). c. 100% internal visual inspection to the applicable class q or v criteria defined in mil-std-883, method 2010 or the alternate procedures allowed in mil-std-883, method 5004. a.4.3 conformance inspection . a.4.3.1 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see a.3.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testin g of packaged die shall be as specified in table iia herein. group e tests and conditi ons are as specifi ed in paragraphs 4.4.4 herein. a.5. die carrier a.5.1 die carrier requirements . the requirements for the die carrier shall be in accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical a nd electrostatic protection. a.6. notes a.6.1 intended use . microcircuit die conforming to this drawing are in tended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (origi nal equipment), design applications, and logistics purposes. a.6.2 comments . comments on this appendix should be directed to dscc-va, p.o. box 3990, columbus, ohio 43218-3990 or telephone (614) 692-0547. a.6.3 abbreviations, symbols and definitions . the abbreviations, symbols, and defin itions used herein are defined in mil-prf-38535 and mil-hdbk-1331. a.6.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml- 38535 have submitted a certif icate of compliance (see a.3.6 herein) to dscc-va and have agreed to this drawing.
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 23 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 die bonding pad locations and electrical functions . die physical dimensions . die size: 2240 x 2240 microns die thickness: 21 2 mils note: pad numbers reflect terminal numbers when placed in case outlines c and x (see figure 1). figure a-1. die bonding pad locations and electrical functions .
standard microcircuit drawing size a 5962-96799 defense supply center columbus columbus, ohio 43218-3990 revision level d sheet 24 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-96799 interface materials . device type 01 metal 1: aisicu 7.5ka 0.75ka metal 2 (top): alsicu 10.0ka 1.0ka device type 02 metal 1: aisi 7.0ka 1.0ka metal 2 (top): alsi 10.0ka 1.0ka backside metallization: none glassivation . device type 01 type: psg thickness: 8.0ka 1.0ka device type 02 type: psg thickness: 13.0ka 1.5ka substrate: silicon on sapphire (sos) assembly related information . substrate potential: insulator special assembly instructions: bond pad #14 (v cc ) first figure a-1. die bonding pad locations and electrical functions ? continued.
standard microcircuit drawing bulletin date: 08-01-23 approved sources of supply for smd 5962-96799 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next re vision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of s ources. the vendors listed below have agr eed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this informati on bulletin is superseded by the next dated revision of mil-hdbk-103 and qml- 38535. dscc maintains an online databas e of all current sources of supply at http:// www.d scc.dla.mil/programs/smcr/. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962f9679901vcc 34371 acs74dmsr 5962f9679901vxc 34371 acs74kmsr 5962f9679901v9a 34371 acs74hmsr 5962f9679902vcc 3 / acs74dmsr-02 5962f9679902vxc 3 / acs74kmsr-02 5962f9679902v9a 3 / acs74hmsr-02 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance require ments of this drawing. 3 / not available from an approved source of supply. vendor cage vendor name number and address 34371 intersil corporation 1650 robert j. conlan blvd palm bay, fl 32905 the information contained herein is di sseminated for convenience only and the government assumes no liability whats oever for any inaccuracies in the information bulletin.

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